SIA

ELECTRONICS AND COMMUNICATIONS - DIPLOMA SBTET TS I YEAR / II SEM

C18

Polytechnic (Diploma) II-Semester (SBTET-TS) (C18) Common to ALL Branches

Polytechnic (Diploma) II-Semester (SBTET-TS) (C18) Common to ALL Branches

SUBJECTS COVERED
1. Advanced English
2. Engineering Mathematics
3. Engineering Chemistry & Environmental Studies
4. Applied Physics
5. Advanced Engineering Drawing.

old syllabus

Semiconductor Devices, (DECE) II-Semester (C18) (SBTET-TS) Spectrum All-In-One Series, Latest Edition

Semiconductor Devices, (DECE) II-Semester (C18) (SBTET-TS) Spectrum All-In-One Series, Latest Edition

Syllabus

UNIT-I
Semiconductor Diodes: Electrical properties of semiconductor materials-energy level diagrams of conductor, semiconductor and Insulator-Formation of P-Type and N-Type materials and their properties-Drift and diffusion current- Formation and behaviour of PN junction diode.-Forward and Reverse bias characteristics,. Special purpose diodes – Zener diode- Characteristics-zener breakdown and avalanche breakdown, LEDs, Varactor diodes.
UNIT-II
Transistors: Formation and properties of PNP and NPN Transistor-Transistor configurations-input and output characteristics- α, β and γ factors-Comparison of CB,CE,CC configurations- Transistor as an amplifier.
UNIT-III
Transistor Biasing: Basic amplifier concept using BJT-CE mode.- reason for wide use of CE amplifier Concept of DC and AC load line- selection of operating point on DC load line with waveforms.-factors affecting the Q-point- thermal runaway- need for proper biasing in amplifier circuits.-types of biasing circuits- stabilization in amplifier circuits- various stability factors (S, Sβ, SVBE)-expression for stability factor in CE configuration- fixed bias circuit and derive its stability factor.
UNIT-IV
JFET & MOSFET: Compare JFET and BJT-List the merits of JFET over BJT- principle of operation of n-channel JFET – drain characteristics of JFET- pinch-off voltage of JFET- mutual characteristics of JFET-Important parameters of JFET – JFET classification –Construction and principle of – operation of depletion type n-channel MOSFET.-Explain the construction and principle of operation of enhancement type n-channel MOSFET. - JFET and MOSFET Comparison - Principle of operation of CMOSFET.
UNIT-V
DC Power Supplies: DC power supply- Half wave, Full wave and Bridge rectifiers-RMS value, Average value, Ripple factor, Voltage regulation. Filters – RC,CRC and CLC. Zener regulator – series and shunt IC regulators and specifications of RPS-Inverter.
UNIT-VI
Engineering Applications: Specifications - Commonly used Diode Numbers- Use of a PN junction diode for applications like: protection against polarity reversal, power control of soldering Irons, Dimming of incandescent lamps, Temperature sensing: Selection of Transistor based on the β Beta of the Transistor-Numbers of commonly used Transistors Significance of the number marked on the Transistor case-Transistor Packages and Pin Configuration, Design of Self Bias circuit, Important specifications of JFET –Drift problem in FET, Calculation of voltage regulation, Ripple factor of DC Power Supply-Design of a Zener regulator circuit for given Line and Load voltages,Power ratings. Design of RPS using 78XX series IC Regulator.